Active solid-state devices (e.g. – transistors – solid-state diode – Voltage variable capacitance device
Reexamination Certificate
2005-05-10
2005-05-10
Pham, Hoai (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Voltage variable capacitance device
C257S313000
Reexamination Certificate
active
06891251
ABSTRACT:
Varactors are provided which have a high tunability and/or a high quality factor associated therewith as well as methods for fabricating the same. One type of varactor disclosed is a quasi hyper-abrupt base-collector junction varactor which includes a substrate having a collector region of a first conductivity type atop a subcollector region, the collector region having a plurality of isolation regions present therein; reach-through implant regions located between at least a pair of the isolation regions; a SiGe layer atop a portion of the substrate not containing a reach-through implant region, the SiGe layer having an extrinsic base region of a second conductivity type which is different from the first conductivity type; and an antimony implant region located between the extrinsic base region and the subcollector region. Another type of varactor disclosed is an MOS varactor which includes at least a poly gate region and a well region wherein the poly gate region and the well region have opposite polarities.
REFERENCES:
patent: 3636420 (1972-01-01), Vendelin et al.
patent: 3638300 (1972-02-01), Foxhall et al.
patent: 3909305 (1975-09-01), Boroffka et al.
patent: 4021844 (1977-05-01), Gilles et al.
patent: 4226648 (1980-10-01), Goodwin et al.
patent: 4249262 (1981-02-01), Fenk
patent: 4438445 (1984-03-01), Colquhoun et al.
patent: 4827319 (1989-05-01), Pavlidis et al.
patent: 4973922 (1990-11-01), Embree et al.
patent: 5014018 (1991-05-01), Rodwell et al.
patent: 5121067 (1992-06-01), Marsland
patent: 5256996 (1993-10-01), Marsland et al.
patent: 5557140 (1996-09-01), Nguyen et al.
patent: 5965912 (1999-10-01), Stolfa et al.
patent: 6060962 (2000-05-01), Sokolov et al.
patent: 6100770 (2000-08-01), Litwin et al.
patent: 6211745 (2001-04-01), Mucke et al.
Joachim N. Burghartz, et al. “Integrated RF and Microwave Components in BiCMOS Technology.” IEEE Transactions on Electron Devices, vol. 43, No. 9, Sep. 1996 (pp. 1559-1570).
R.A. Moline, et al., “Ion-Implanted Hyperabrupt Junction Voltage Variable Capacitors.” IEEE Transactions on Electron Devices, vol. ED-19, No. 2, Feb. 1972 (pp. 267-273).
Coolbaugh Douglas D.
Dunn James S.
Gordon Michael D.
Hammad Mohammed Y.
Johnson Jeffrey B.
Farahani Dana
International Business Machines - Corporation
Pham Hoai
Sabo, Esq. William D.
Scully Scott Murphy & Presser
LandOfFree
Varactors for CMOS and BiCMOS technologies does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Varactors for CMOS and BiCMOS technologies, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Varactors for CMOS and BiCMOS technologies will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3454390