Semiconductor device manufacturing: process – Voltage variable capacitance device manufacture
Reexamination Certificate
2007-01-30
2007-01-30
Hu, Shouxiang (Department: 2811)
Semiconductor device manufacturing: process
Voltage variable capacitance device manufacture
C438S197000, C438S479000
Reexamination Certificate
active
10040395
ABSTRACT:
A varactor has a plurality of alternating P− wells and N+ regions formed in a silicon layer. Each of the P− wells forms a first N+/P− junction with the N+ region on one of its side and a second N+/P− junction with the N+ region on the other of its sides. A gate oxide is provided over each of the P− wells, and a gate silicon is provided over each of the gate oxides. The potential across the gate silicons and the N+ regions controls the capacitance of the varactor.
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Fathimulla Mohammed A.
Larson William L.
Vogt Eric E.
Yue Cheisan J.
Honeywell International , Inc.
Hu Shouxiang
McDonnell Boehnen & Hulbert & Berghoff LLP
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