Active solid-state devices (e.g. – transistors – solid-state diode – Voltage variable capacitance device – With specified dopant profile
Patent
1995-11-09
1998-08-04
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Voltage variable capacitance device
With specified dopant profile
257596, 257598, H01L 2993
Patent
active
057898014
ABSTRACT:
A varactor comprising a substrate of semiconductor material on which is grown both an electrostatic barrier having a first layer of material doped with donor impurities and a second layer of material doped with acceptor impurities and a depletable layer. In other embodiments of the present invention varactors are provided that include a plurality of barrier and depletable layer pairs grown in a serial arrangement.
REFERENCES:
patent: 4987459 (1991-01-01), Kasahara
patent: 5336923 (1994-08-01), Geddes et al.
patent: 5506442 (1996-04-01), Takemura
Adamson Steven J.
Anderson Edward B.
Endgate Corporation
Ngo Ngan V.
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