Active solid-state devices (e.g. – transistors – solid-state diode – Voltage variable capacitance device
Reexamination Certificate
2009-08-06
2011-11-08
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Voltage variable capacitance device
C257SE27049, C257SE29344, C257SE21364, C327S586000, C438S379000
Reexamination Certificate
active
08053866
ABSTRACT:
An improved varactor diode (20, 50) having first (45) and second (44) terminals is obtained by providing a substrate (22, 52) having a first surface (21, 51) in which are formed isolation regions (28, 58) separating first (23, 53) and second (25, 55) parts of the diode (20, 50). A varactor junction (40, 70) is formed in the first part (23, 53) and having a first side (35, 66) coupled to the first terminal (45) and a second side (34, 54) coupled to the second terminal (44) via a sub-isolation buried layer (SIBL) region (26, 56) extending under the bottom (886) and partly up the sides (885) of the isolation regions (28, 58) to a further doped region (30, 32; 60, 62) ohmically connected to the second terminal (44). The first part (36, 66) does not extend to the SIBL region (26, 56). The varactor junction (40, 70) desirably comprises a hyper-abrupt doped region (34, 54). The combination provides improved tuning ratio, operating frequency and breakdown voltage of the varactor diode (20, 50) while still providing adequate Q.
REFERENCES:
patent: 7025615 (2006-04-01), Johansson et al.
patent: 7084485 (2006-08-01), Kirchgessner
Abadeer, W., et al., A Capacitance Reliability Degradation Mechanism in Hyper-Abrupt Junction Varactors, IEEE, 4244-2050 Jun. 2008 pp. 310-314.
Cao, C.,et al., Millimeter-Wave Voltage-Controlled Oscillators in 0.13-um CMOS Technology, IEEE Journal of Solid-State Circuits, vol. 41, No. 6, Jun. 2006 pp. 1297-1304.
Jenkins, K., et al., Characteristics of Submicron MOS Varactors, IEEE, 7803-9472, Feb. 2006, pp. 123-126.
Vytla, R., et al., Simultaneous Integration of SiGe High Speed Transistors and High Voltage Transistors, IEEE, 4244-0459, Jun. 2006.
Huang Wen Ling M.
Morgan David G.
Reuda Hernan A.
Trivedi Vishal P.
Welch Pamela J.
Freescale Semiconductor Inc.
Ingrassia Fisher & Lorenz PC
Mandala Victor A
Moore Whitney T
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