Active solid-state devices (e.g. – transistors – solid-state diode – Voltage variable capacitance device – With specified dopant profile
Reexamination Certificate
2011-04-12
2011-04-12
Dickey, Thomas L (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Voltage variable capacitance device
With specified dopant profile
C257SE29344
Reexamination Certificate
active
07923818
ABSTRACT:
A varactor element having a junction region, in which the depletion capacitance of the varactor element varies when a reverse bias voltage is applied to the varactor element. The varactor element has an exponential depletion capacitance-voltage relation, e.g. obtained by providing a predetermined doping profile in the junction region. The varactor element can be used in a narrow tone spacing varactor stack arrangement, in which two varactor elements are connected in an anti-series configuration. A low impedance path for base band frequency components between a control node and each of two RF connection nodes is provided, while for fundamental and higher order harmonic frequencies, a high impedance path is provided.
REFERENCES:
patent: 3764415 (1973-10-01), Raabe et al.
patent: 4565980 (1986-01-01), Ashida
patent: 4868134 (1989-09-01), Kasahara
patent: 5339041 (1994-08-01), Nitardy
patent: 5757074 (1998-05-01), Matloubian et al.
patent: 5763909 (1998-06-01), Mead et al.
patent: 6137323 (2000-10-01), Nicole et al.
patent: 2002/0070815 (2002-06-01), Traub
patent: 281486 (1990-08-01), None
patent: 0452035 (1991-10-01), None
patent: 9718590 (1997-05-01), None
Sze, “Semiconductor Devices. Physics and Technology”, 2002, John Wiley & Sons, pp. 103-104.
Buisman et al. “‘Distortion-Free’ Varactor Diode Topologies for RF Adaptivity” pp. 20-24.
Buisman et al. “‘Distortion-Free’ Varactor Diode Topologies for RF Adaptivity”, Microwave Symposium Digest, Jun. 2005, pp. 157-160.
Buisman et al. “Low-Distortion, Low-Loss Varactor-Based Adaptive Matching Networks, Implemented in a Silicon-on-Glass Technology”, in Proc. 2005 Radio Frequency IC Symp., Long Beach, CA, Jun. 2005, 4 pages.
Meyer et al. “Distortion in Variable-Capacitance Diodes”, Journal of Solid-State Circuits, Feb. 1975, vol. SC-10, No. 1, pp. 47-54.
Dickey Thomas L
Technische Universiteit Delft
The Webb Law Firm
Yushin Nikolay
LandOfFree
Varactor element and low distortion varactor circuit... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Varactor element and low distortion varactor circuit..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Varactor element and low distortion varactor circuit... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2692603