Varactor diode controllable by surface layout design

Details Varactor diode controllable by surface layout design Varactor diode controllable by surface layout design

1997-02-18

1998-05-05

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

In voltage variable capacitance diode

257595, 257598, 257599, 257600, H01L 2993

Patent

active

057478651

ABSTRACT:
An area-variable varactor diode is disclosed, in which the capacitance can be arbitrarily varied under an applied bias voltage. The area-variable varactor diode is characterized in that, in order to ensure freedom to designing the epi-layer, to obtain the desired capacitance characteristics, and to facilitate the integration with other elements, a steeply varied depletion layer area is provided through a variation of the surface layout area, and thus, varied capacitance characteristics are obtained. In steeply varying the area of the depletion layer, an etching of the active layer, a selective epi-layer growth, and an ion implantation are carried out or a combination of them is carried out. The capacitance characteristics are varied in accordance with the pattern of the mask, and therefore, a restriction is not imposed on the epi-layer, with the result that an integration with other elements becomes easy. Further, because the mask pattern is resorted to, it becomes possible to manufacture a varactor diode which shows a capacitance variation of a strong non-linearity and a large capacitance variation rate.

REFERENCES:
patent: 4721985 (1988-01-01), Pavlidis et al.
patent: 5055889 (1991-10-01), Beall
patent: 5276350 (1994-01-01), Merrill et al.
patent: 5336923 (1994-08-01), Geddes et al.

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