Vaporized-metal cluster ion source and ionized-cluster beam depo

Details Vaporized-metal cluster ion source and ionized-cluster beam depo Vaporized-metal cluster ion source and ionized-cluster beam depo

1979-02-13

1980-08-19

Pianalto, Bernard D.

Coating apparatus

Gas or vapor deposition

Multizone chamber

118720, 118723, 118726, 118728, C23C 1308

Patent

active

042178550

ABSTRACT:
The present ion source called "Vaporized-Metal Cluster Ion Source" is adapted to produce ionized vapor aggregate (ionized cluster) instead of atomic or molecular ions in conventional ion sources. Clusters consisting of 10.sup.2 -10.sup.3 atoms are formed by the adiabatic expansion due to the ejection into a high vacuum region through a nozzle of a heated crucible and ionized by electron bombardment. By "Ionized-Cluster Beam Deposition" using the ion source, fine-quality deposited films of many kinds of materials can be obtained on metal, semiconductor and insulator substrate with strong adhesion and with a fairly high deposition rate.

REFERENCES:
patent: 3793070 (1974-02-01), Schoolar
patent: 3847114 (1974-11-01), Kiyozumi
patent: 3912826 (1975-10-01), Kennedy

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