Vapor processing of a substrate

Details Vapor processing of a substrate Vapor processing of a substrate

1989-06-06

1990-12-25

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG26, 148DIG50, 148DIG95, 156644, 156649, 372 48, 437 90, 437133, 437981, H01L 2120, H01L 21302

Patent

active

049803140

ABSTRACT:
Proposed is a method of fabricating semiconductor devices involving vapor etching of channels and/or growth of layers in a substrate. The etch or growth rate is controlled by opening up additional regions in the mask which are separated from the opening used to define the active region. The etching or growth in the additional exposed regions of the substrate consumes a certain amount of reactant and controllably reduces the amount available for etching or growth in the active region.

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