Vapor phase growth technique of III-V compounds utilizing a preh

Details Vapor phase growth technique of III-V compounds utilizing a preh Vapor phase growth technique of III-V compounds utilizing a preh

1977-10-06

1978-09-26

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148 15, 148174, 156612, 156613, 156614, H01L 21205, H01L 2930, H01L 2938

Patent

active

041167333

ABSTRACT:
In the vapor phase epitaxy fabrication of semiconductor devices and in particular semiconductor lasers, the deposition body on which a particular layer of the laser is to be grown is preheated to a temperature about 40.degree. to 60.degree. C. lower than the temperature at which deposition occurs. It has been discovered that by preheating at this lower temperature there is reduced thermal decomposition at the deposition surface, especially for semiconductor materials such as indium gallium phosphide and gallium arsenide phosphide. A reduction in thermal decomposition reduces imperfections in the deposition body in the vicinity of the deposition surface, thereby providing a device with higher efficiency and longer lifetime.

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