Vapor phase growth of III-V materials

Details Vapor phase growth of III-V materials Vapor phase growth of III-V materials

1985-12-26

1987-10-13

Hearn, Brian E.

Fishing, trapping, and vermin destroying

118719, 427 38, 427 39, 427309, 437108, H01L 21203

Patent

active

046996753

ABSTRACT:
The fabrication of a layer of a III-V semiconductor material by vapor phase epitaxy is improved by precoating the walls of the deposition chamber in a suitable apparatus with the desired material. The coating of the deposition chamber is continued until the material being deposited is depth-uniform and of the same composition as the desired layer. Material then deposited on the substrate is free of depth compositional gradient. In a further improvement, the walls of the deposition chamber of the apparatus are roughened, thus providing nucleation sites for the growing coating and substantially reducing the time required to precoat the walls of the deposition chamber.

REFERENCES:
patent: 3312570 (1967-04-01), Ruehrwein
patent: 3493811 (1970-02-01), Ewing
patent: 3853974 (1974-12-01), Revschel et al.
patent: 3893876 (1975-07-01), Akai et al.
patent: 3978253 (1976-08-01), Sahm
patent: 4022928 (1977-05-01), Piwcyzk
patent: 4062706 (1977-12-01), Ruehrwien
patent: 4116733 (1978-09-01), Olsen et al.
patent: 4428975 (1984-01-01), Dahm et al.
patent: 4430149 (1984-02-01), Berkman
patent: 4522849 (1985-06-01), Lewandowski
patent: 4579609 (1986-04-01), Rief et al.
Olsen et al., Journal of Electronic Materials, vol. 9, No. 6, pp. 977-987, (1980).
Olsen in GaInAsP Alloy Semiconductors, T. P. Pearsall, Editor, John Wiley & Sons, (New York, 1982), pp. 11-41.

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