Coating processes – Direct application of electrical – magnetic – wave – or... – Photoinitiated chemical vapor deposition
Patent
1993-10-27
1995-04-04
King, Roy V.
Coating processes
Direct application of electrical, magnetic, wave, or...
Photoinitiated chemical vapor deposition
427595, 4272553, 4272552, 4272551, 437238, B05D 306, C23C 1600
Patent
active
054036305
ABSTRACT:
A vapor-phase growth method comprising the steps of introducing a silicon-containing gas and ozone into a reaction vessel containing a sample, and introducing excited oxygen obtained by exciting an oxygen gas or an oxygen-containing gas, into the reaction vessel at the same the as, before, or after the silicon-containing gas and the ozone are introduced into the reaction vessel. The silicon-containing gas and the ozone react, forming an intermediate product which can readily condense. The intermediate product reacts with the excited oxygen, thereby forming a thin insulating film which excels in step coverage and has good insulating property.
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Webb et al, "Silicon dioxide films produced by PECVD of TEOS and TMCTS", Proc.-Electrochem. Soc., 89-9 (ULSI Sci. Technol. 1989) pp. 571-585.
Proceedings of Electrochemical Society Spring Meeting, J. Sato, et al., p. 31, Abstract No. 9, 1971.
Matsui Isao
Ui Akio
Kabushiki Kaisha Toshiba
King Roy V.
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