Vapor phase growth method by controlling the heat output in...

Details Vapor phase growth method by controlling the heat output in... Vapor phase growth method by controlling the heat output in...

2006-05-23

2006-05-23

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Including control responsive to sensed condition

C438S900000, C438S908000, C438S909000, C438S913000, C118S715000, C118S719000

Reexamination Certificate

active

07049154

ABSTRACT:
A vapor phase growth method for growing a semiconductor single crystal thin film on a front surface of a semiconductor single crystal substrate (1) while introducing gas into a reaction chamber (11), has a step of performing heating output power control in a gas introduction region (R1) according to a temperature detected in a region other than the gas introduction region (R1) in the reaction chamber (11).

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