Coating apparatus – Gas or vapor deposition – With treating means
Patent
1996-01-30
1998-09-01
Bueker, Richard
Coating apparatus
Gas or vapor deposition
With treating means
118728, 118730, C23C 1600
Patent
active
058006222
ABSTRACT:
In a thermal radiation type substrate heating system of an MOCVD growth apparatus, a susceptor includes a semi-circular concavity is formed in each of wafer pockets at the forward area in a wafer rotation direction so that P-richness in a crystalline film grown at the gas upstream area is suppressed. Specifically, the conventional wafer holder exhibits a non-uniform temperature distribution so that the surface temperature is high at the gas upstream area and low at the downstream area. On the other hand, the structure according to the present invention realizes a high temperature at a wafer contact area and a low temperature at a wafer non-contact area, thus leading to a uniform surface temperature over the entire gas upstream and downstream areas.
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Fair, Rapid Thermal processing, Academic Press, .COPYRGT.1993, pp. 361-362.
Ohkura Yuji
Takemi Masayoshi
Bueker Richard
Mitsubishi Denki & Kabushiki Kaisha
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