Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
Reexamination Certificate
2008-03-18
2008-03-18
Hiteshew, Felisa (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
For crystallization from liquid or supercritical state
C117S200000, C117S217000, C117S900000
Reexamination Certificate
active
10515970
ABSTRACT:
A vapor-phase growth apparatus includes: at least a reaction furnace which is hermetically closable, a wafer container which is disposed in the reaction furnace, for disposing a wafer at a predetermined position, a gas supply member for supplying a source gas toward the wafer, and a heating member for heating the wafer, wherein the apparatus is designed to form a grown film on a front surface of the wafer by supplying the source gas in a high temperature state while the heating member heats the wafer in the reaction furnace through the wafer container. The wafer container is made of a single material or a single member, and has a ratio R2/R1, which is not less than 0.4 to not more than 1.0, where R1is a heat resistance for a heat transfer route from a rear surface of the wafer container toward the front surface of the wafer, and R2is a heat resistance for a heat transfer route from the rear surface of the wafer container toward a front surface of the wafer container.
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Makino Nobuhito
Shimizu Eiichi
Hiteshew Felisa
Nippon Mining & Metals Co., Ltd.
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