Vapor-phase epitaxy of indium phosphide and other compounds usin

Details Vapor-phase epitaxy of indium phosphide and other compounds usin Vapor-phase epitaxy of indium phosphide and other compounds usin

1987-06-23

1989-01-31

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG57, 148DIG65, 148DIG119, 156614, 156610, 437133, 437949, H01L 21205

Patent

active

048015571

ABSTRACT:
Chemical vapor deposition of III-V and II-VI binary, ternary and quaternary compounds is facilitated by maintaining a relatively high flow rate of reactants and modulating the rate of flow by alternately directing the flow at the high rate into a reactor for use and then directing the flow to a vent. Growth rates of the order of 25 Angstroms per minute were achieved in the epitaxial growth of indium phosphide by flow-rate modulation. This produced crystals of device quality having measured carrier mobilities of 2850-3600. In the case of epitaxial growth of ternary and quaternary compounds, improved control of deposition rates is achieved by applying flow-rate modulation to the compound carriers of each of the Group V and VI elements.

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"Growth and Characterization of Vapor Deposited Indium Phosphide", Wessels and Inuishi, SPIE, vol. 323, Semi-Conductor Growth Technology (1982), p. 55.

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