Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1985-03-01
1986-12-30
Saba, William G.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29576E, 148DIG63, 148DIG64, 148DIG110, 156610, 156613, 156614, 156DIG72, 156DIG77, H01L 21365, H01L 2922
Patent
active
046327118
ABSTRACT:
A zinc selenide or zinc selenide-sulphide epitaxial crystal is grown at a growth temperature of about 180.degree.-320.degree. C. by organometallic chemical vapor deposition by using zinc alkyl and hydrogen selenide and/or hydrogen sulphide. An as-grown crystal presented an n conductivity type low resistivity and exhibited a narrow near-band gap emission peak. Besides a crystal of the same material as the epitaxial layer, crystals of group III-V, group IV, and so forth having the same or similar crystal structure as the epitaxial layer can be used as an underlayer for the growth.
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Fujita Shigeo
Matsuda Yoshinobu
Sasaki Akio
Saba William G.
Sumitomo Chemical Company Limited
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