Vapor phase epitaxial growth apparatus having exhaust unit for r

Details Vapor phase epitaxial growth apparatus having exhaust unit for r Vapor phase epitaxial growth apparatus having exhaust unit for r

1991-08-02

1992-10-13

Simmons, David A.

Coating apparatus

Gas or vapor deposition

With treating means

118719, 156345, C23C 1646

Patent

active

051547732

ABSTRACT:
A vapor phase growth apparatus has a reaction chamber including a suscepter on which a plurality of semiconductor wafers are mounted, a first exhaust unit arranged under the lower portion of the reaction chamber, a second exhaust unit arranged under the first exhaust unit, and a separator provided between the first and second exhaust units so as to be openable and closable. After the reaction chamber and the second exhaust unit are placed in a communicating state with each other by opening the separator, a reaction gas is introduced into the reaction chamber so as to form a film on the wafers. Prior to the next film formation, the second exhaust unit is placed in a non-communicating state with the first exhaust unit to purge the interior of the reaction chamber. Simultaneous with the purging, the deposit on the bottom of the second exhaust unit is removed by supplying to the second exhaust unit a gas for decomposing the deposit.

REFERENCES:
patent: 4632060 (1986-12-01), Goto et al.
patent: 4786352 (1988-11-01), Benying

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