Vapor phase diffusion of aluminum with or without boron

Details Vapor phase diffusion of aluminum with or without boron Vapor phase diffusion of aluminum with or without boron

1978-08-07

1980-03-18

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148187, 148190, H01L 21223

Patent

active

041938267

ABSTRACT:
A method of fabricating a semiconductor device through selective diffusion of aluminum vapor into a silicon substrate by heating a sealed tube in which the silicon substrate and an aluminum source are disposed. The diffusion is effected with a low concentration of aluminum smaller than about 10.sup.17 atoms/cm.sup.3, thereby making it possible to use a silicon oxide film as a diffusion mask for the selective diffusion of aluminum at predetermined region of the silicon substrate.

REFERENCES:
patent: 3562033 (1971-02-01), Jansen et al.
patent: 3577287 (1971-05-01), Norwich et al.
patent: 3615936 (1971-10-01), Batz
patent: 3615945 (1971-10-01), Yokozawa
patent: 3798084 (1974-03-01), Lyons
patent: 4029528 (1977-06-01), Rosnowski
Electrochemical Technology, No. 3-4, Mar.-Apr. 1967, pp. 90-94.
National Technical Report, No. 6, Jun. 1968, Matsushita Electronics Corp., pp. 183-190.

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