Vapor phase deposition apparatus

Details Vapor phase deposition apparatus Vapor phase deposition apparatus

1985-02-28

1986-06-03

Smith, John D.

Coating apparatus

Gas or vapor deposition

Multizone chamber

118725, 118726, 118728, 118729, 118733, C23C 1600

Patent

active

045923078

ABSTRACT:
A conventional vapor phase deposition reactor tube typically formed of quartz is provided with a tubular liner supporting one or two crucibles carrying in turn one or two boats for holding constituents used for the deposition process. The liner, crucibles and boats are formed preferably of pyrolytic boron nitride (PBN). Reactant or constituent gas carrying tubes are formed preferably of sapphire. A buffer zone of an inert gas upstream of the liner and between the liner and the tube serves to isolate the liner and reactor tube from contaminating gases.

REFERENCES:
patent: 3391017 (1968-07-01), Bolger et al.
patent: 3441000 (1969-04-01), Burd et al.
patent: 3446659 (1969-05-01), Wisman et al.
patent: 3492969 (1970-02-01), Emeis
patent: 3617371 (1971-11-01), Burmeister, Jr.
patent: 3645695 (1972-02-01), Koepp et al.
patent: 3838722 (1974-08-01), Reuter et al.
patent: 3925119 (1975-12-01), Philbrick et al.
patent: 4316430 (1982-02-01), Jolly et al.
J. V. DiLorenzo et al., "Effects of the AsCl.sub.3 Mole Fraction on the Incorporation of Germanium, Silicon, Selenium, and Sulfur into Vapor Grown Epitaxial Layers of GaAs" J. Electrochem. Soc.: Solid State Science, vol. 118, No. 11, Nov. 1971, pp. 1823-1830.
J. V. DiLorenzo, "Vapor Growth of Epitaxial GaAs: A Summary of Parameters Which Influence the Purity and Morphology of Epitaxial Layers" Journal of Crystal Growth 17 (1972), pp. 189-206.

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