Vapor growth apparatus having a diffuser section containing a fl

Coating apparatus – Gas or vapor deposition – Multizone chamber

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118715, 118728, 239592, C23C 1600

Patent

active

049933604

ABSTRACT:
A vapor growth apparatus comprising a reaction chamber including a gas inlet, a diffuser section, the cross section of which gradually increases in a direction of the flow of gas supplied from the gas inlet, and a reaction chamber, which is coupled to the diffuser section and in which a substrate on which a thin film is to be formed is arranged, and a flow regulating member arranged, within the diffuser section, to make the flow speed of gas passing over the substrate uniform in a direction perpendicular to the direction of the flow of the gas. The flow speed of gas flowing over the substrate is made uniform in a direction perpendicualr to the direction of the flow of the gas, so that a thin film can be uniformly formed on the substrate in a direction perpendicular to the direction of the flow of the gas.

REFERENCES:
patent: 3996025 (1976-12-01), Gulden
patent: 4825809 (1989-05-01), Mieno
Viva, O. R., "Obtaining Improved Gas Flow in Diffusion Apparatus", IBM Technical Disclosure Bulletin, vol. 14, No. 9 (Feb. 1972), p. 2550.

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