Vapor growth apparatus and vapor growth method capable of growin

Details Vapor growth apparatus and vapor growth method capable of growin Vapor growth apparatus and vapor growth method capable of growin

1996-12-27

1998-03-24

Bueker, Richard

Coating apparatus

Gas or vapor deposition

Multizone chamber

118730, 4272481, 4272552, 4272557, C23C 1600

Patent

active

057308020

ABSTRACT:
A vapor growth apparatus and a vapor growth method is capable of growing a compound semiconductor layer having an evenness and an interfacial sharpness in units of atomic layers with a good productivity. A growth chamber has a cylindrical portion and an end plate which closes an upstream end of the cylindrical portion. The end plate is provided with a cation gas material supply inlet and an anion material gas supply inlet, while an exhaust device is provided on the downstream side of the cylindrical portion. A substrate holder having a substrate support surface is provided in the cylinder portion. A gas separating member separates flow paths of material gases from each other, thereby forming on the substrate support surface a plurality of material gas supply areas to which the material gases are independently supplied. A drive device rotates the substrate holder with a substrate set on the substrate support surface thereof around the center line of the cylindrical portion. Then a cation material and an anion material gas are alternately supplied to the surface of the substrate.

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