Vapor generation system and process

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means

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118726, C23F 102

Patent

active

060867116

ABSTRACT:
A vapor generation system includes a supply of liquid; an inert gas stream; an aspirator for aspirating the liquid into the gas stream; a heater for heating the gas stream upstream from the aspirator to a temperature such that aspirated liquid is vaporized in the aspirator to form an inert gas and liquid vaporous mixture; and a mixture outlet for flowing the vaporous mixture against a surface of a workpiece. In a particular application a nitrogen gas stream is heated in a heat exchanger and flows through an aspirator/evaporator to vaporize pumped pulses of hydrofluoric acid in the heated flow stream. The resultant vaporous mixture forms a suitable vaporous etchant for removing silicon dioxide contaminates from a conveyor belt which is employed to convey semiconductor wafers through a chemical vapor deposition processing chamber.

REFERENCES:
patent: 4544060 (1985-10-01), Enomoto
patent: 5078922 (1992-01-01), Collins et al.
patent: 5190064 (1993-03-01), Aigo
patent: 5203925 (1993-04-01), Shibuya et al.
patent: 5204314 (1993-04-01), Kirlin et al.
patent: 5413671 (1995-05-01), Ketchum
patent: 5421895 (1995-06-01), Tsubouchi et al.
patent: 5500081 (1996-03-01), Bergman
patent: 5542441 (1996-08-01), Mohindra et al.
patent: 5707415 (1998-01-01), Cain

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