Vapor epitaxial method for depositing gallium arsenide phosphide

Details Vapor epitaxial method for depositing gallium arsenide phosphide Vapor epitaxial method for depositing gallium arsenide phosphide

1975-10-17

1976-12-28

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

156610, 156612, 357 16, 357 17, H01L 2120, H01L 2926

Patent

active

040000206

ABSTRACT:
The disclosure relates to methods of producing light-emitting (LED) device quality gallium arsenide phosphide on germanium or silicon substrate wafers. In accordance with one embodiment of this disclosure, a germanium substrate is coated with silicon nitride (Si.sub.3 N.sub.4), boron nitride or silicon dioxide deposited by RF plasma which removes the pinholes which are found in silicon dioxide coatings deposited by standard techniques. The coatings should be of sufficient thickness, with few pinholes and high enough density to prevent passage of HCL gas therethrough and formation of germanium chloride (GeCl.sub.4) gas. The silicon nitride is removed from one surface of the substrate and 10 micron layer of gallium arsenide is deposited thereon. A layer of graded gallium arsenide phosphide is then deposited on the gallium arsenide phosphide as in the previous embodiments to provide the completed wafer having a germanium substrate.

REFERENCES:
patent: 3309553 (1967-03-01), Kroemer
patent: 3663319 (1972-05-01), Rose
patent: 3723201 (1973-03-01), Keil
patent: 3745423 (1973-07-01), Kasano
patent: 3769104 (1973-10-01), Ono et al.
Burmeister et al., "Epitaxial Growth of GaAs.sub.rx P.sub.x on Germanium Substrates" Trans. Metall. Soc. of Aime, vol. 245, Mar. 1969, pp. 565-569.
Ladd et al., "Autodoping Effects at the Interface of GaAr-Ge Heterojunctions" Metallurgical Trans., vol. 1, Mar. 1970, pp. 609-616.

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