Vapor deposition system and vapor deposition method

Coating apparatus – Gas or vapor deposition

Reexamination Certificate

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C156S345330

Reexamination Certificate

active

08062425

ABSTRACT:
There is provided a device or a method including a flow path switching unit which switches a first flow path for releasing the vapor deposition material evaporated from a vapor depositing source from the same into a chamber, and a second flow path for causing the vapor deposition material evaporated from the vapor depositing source to flow from the vapor depositing source through a transfer path into a recovery container. The vapor deposition system or the vapor deposition method is capable of reducing an amount of a vapor deposition material consumed without being deposited on an object not to be processed during non-vapor deposition.

REFERENCES:
patent: 5083590 (1992-01-01), Gattolliat et al.
patent: 5635408 (1997-06-01), Sano et al.
patent: 6027760 (2000-02-01), Gurer et al.
patent: 6365229 (2002-04-01), Robbins
patent: 6379747 (2002-04-01), Sato
patent: 2003/0155079 (2003-08-01), Bailey et al.
patent: 2004/0007176 (2004-01-01), Janakiraman et al.
patent: 2004/0074351 (2004-04-01), Nitagai et al.
patent: 2005/0217584 (2005-10-01), Abiko et al.
patent: 2006/0165892 (2006-07-01), Weidman
patent: 11-229123 (1998-02-01), None
patent: 2005-281808 (2005-10-01), None
Machine Translation from the Japanese Patent Office database of JPLO No. H11-229123.

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