Vapor deposition of thin films

Details Vapor deposition of thin films Vapor deposition of thin films

1990-10-05

1992-09-22

Zimmerman, John

Stock material or miscellaneous articles

All metal or with adjacent metals

Composite; i.e., plural, adjacent, spatially distinct metal...

428457, 428938, 427252, 4272551, C23C 1618, C23C 1644, B32B 1500

Patent

active

051495961

ABSTRACT:
A highly pure thin metal film having a nanocrystalline structure and a process of preparing such highly pure thin metal films of, e.g., rhodium, iridium, molybdenum, tungsten, rhenium, platinum, or palladium by plasma assisted chemical vapor deposition of, e.g., rhodium(allyl).sub.3, iridium(allyl).sub.3, molybdenum(allyl).sub.4, tungsten(allyl).sub.4, rhenium(allyl).sub.4, platinum(allyl).sub.2, or palladium(allyl).sub.2 are disclosed. Additionally, a general process of reducing the carbon content of a metallic film prepared from one or more organometallic precursor compounds by plasma assisted chemical vapor deposition is disclosed.

REFERENCES:
patent: 4460618 (1984-07-01), Heinecke et al.
patent: 4818560 (1989-04-01), Ishihara et al.
patent: 4830891 (1989-05-01), Nishitani et al.
patent: 4835005 (1989-05-01), Hirooka et al.
patent: 4869930 (1989-09-01), Clarke et al.
patent: 4886683 (1989-12-01), Hoke et al.
patent: 4992299 (1991-02-01), Hochberg et al.
patent: 5019415 (1991-05-01), Oehr et al.
H. D. Kaesz et al. in Chemical Perspectives on Microelectronic Materials; edited by M. E. Gross et al., Material Research Society Synposium Proceeding No. 131, pp. 395-400 (1989).
A. Etspuler et al., Appl. Phys, A 48, 373-375 (1989) describe a plasma-enhancedchemical vapor deposition of thin films of rhodium from a single stream including an organometallic precursor of dicarbonyl-2,4-pentationato-rhodium, an inert carrier gas and hydrogen.
Yea-jer Chen et al. Appl. Phys. Lett. 53(17), 1591-1592 (1988) describe low temperature organometallic chemical vapor deposition of platinum by decomposition of cyclopentadienyl platium trimethyl in a reaction chamber including separately introduced hydrogen gas.
Chem. Abst., vol. 109:15292q (1988) describes indirect plasma chemical vapor deposition of metal films from metal halides and a plasma of a H-inert gas mixture.
Chem. Abst., vol. 106:187074z describes plasma vapor phase deposition of thin metal films by utilization of a metal halides and a reducing gas, e.g., H.

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