Vapor deposition of H.sub.3 PO.sub.4 and formation of thin phosp

Details Vapor deposition of H.sub.3 PO.sub.4 and formation of thin phosp Vapor deposition of H.sub.3 PO.sub.4 and formation of thin phosp

1980-12-18

1982-11-23

Bernstein, Hiram H.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

156605, 156603, 156DIG64, C30B 102

Patent

active

043603939

ABSTRACT:
Provision for a source of phosphorus dopant on a silicon wafer, for the subsequent formation of an electrical p-n junction, by the vapor deposition, at atmospheric pressure, of phosphoric acid to form an essentially continuous film on a silicon wafer, said wafer being at room temperature, and the firing of said film to form a phosphorus oxide-silicate-glass layer which will not interfere with any antireflective layer deposited thereon.

REFERENCES:
patent: 3173802 (1965-03-01), Patel et al.
patent: 4206026 (1980-06-01), Briska et al.

Affiliated with

Also associated with

Rating

Vapor deposition of H.sub.3 PO.sub.4 and formation of thin phosp does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Vapor deposition of H.sub.3 PO.sub.4 and formation of thin phosp, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Vapor deposition of H.sub.3 PO.sub.4 and formation of thin phosp will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1877766