Vapor deposition of arsenic

Details Vapor deposition of arsenic Vapor deposition of arsenic

1988-02-16

1989-03-21

Childs, Sadie

Coating processes

Coating by vapor, gas, or smoke

427255, 4272551, C23C 1600

Patent

active

048142034

ABSTRACT:
In a vapor deposition process (e.g. MOCVD) for producing an arsenic-containing film on a substrate by thermally decomposing at least a vaporous organo arsenic compound upon a heated substrate, the improvement wherein the organo arsenic compound consists essentially of a C.sub.1 to C.sub.3 monoalkylarsine carried to the heated substrate by means of a flow of an inert carrier gas.

REFERENCES:
patent: 3101280 (1961-04-01), Harrison et al.
patent: 3218203 (1961-10-01), Ruehrwein
patent: 3224913 (1965-12-01), Ruehrwein
patent: 3226270 (1963-09-01), Miederer et al.
patent: 3261726 (1961-10-01), Ruehrwein
patent: 3312570 (1967-04-01), Ruehrwein
patent: 3312571 (1967-04-01), Ruehrwein
patent: 3342551 (1967-09-01), Dotzer
patent: 3364084 (1968-01-01), Ruehrwein
patent: 3462323 (1969-08-01), Groves
patent: 4250205 (1981-02-01), Constant et al.
Manasevit, Proc. SPIE-Int. Soc. Opt. Eng., 1982, vol. 323, pp. 94-99.
Chemical Engineering, Jan. 6, 1964, pp. 110-112.
Chattergee et al., Journal de Physique, 1982, vol. 43, No. 12, C5-491-C5-503.
Griffiths, Chemical and Industry, 1985, pp. 247-251.
Manasevit, Journal of Crystal Growth, 1981, vol. 55, pp. 1-9.
Dehn, American Chemical Journal, vol. 40, pp. 113 and 117-118 (1908).
Didchenko et al., J. Inorg. Nucl. Chem., 1960, vol. 14, 35-37.
Mori et al., Japan Ann. Rev. Electron. Comput. Telecommun., 1983, pp. 35-47.
Brochure entitled, "Organometallics for Vapor Phase Epitaxy" by Alfa Products, part of Morton Thiokol, Inc., pp. 1-97.
Raiziss et al., "Organic Arsenical Compounds", American Chemical Society Monograph, 1923, pp. 36-98.
Dehn, American Chemical Journal, vol. 33, pp. 120 and 143, 1905.

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