Coating processes – Coating by vapor – gas – or smoke – Base includes an inorganic compound containing silicon or...
Patent
1986-05-14
1989-01-17
Childs, Sadie
Coating processes
Coating by vapor, gas, or smoke
Base includes an inorganic compound containing silicon or...
4272552, 437107, C23C 1630
Patent
active
047987430
ABSTRACT:
A vapor phase deposition method for the GaAs thin film is disclosed, which is characterized in that, in the metal organic chemical vapor deposition method (MOCVD method) wherein arsine gas and organic gallium gas are decomposed thermally and GaAs crystals are allowed to deposit onto the GaAs substrate, for the deposition of n-type conductive GaAs crystals, arsine gas and organic gallium gas are supplied at such a supplying ratio (V/III) as p-type conductive GaAs crystals are deposited unless an impurity is added intentionally and gas of the compounds of VI group elements is added to these gases to make n-type conductive GaAs crystals having a carrier density of not less than 1.times.10.sup.16 cm.sup.-3.
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Ikeda Masakiyo
Kashiwayanagi Yuzo
Kikuchi Hiroshi
Kojima Seiji
Childs Sadie
The Furukawa Electric Co. Ltd.
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