Vapor-assisted cryogenic cleaning

Details Vapor-assisted cryogenic cleaning Vapor-assisted cryogenic cleaning

2005-09-27

2005-09-27

Barr, Michael (Department: 1746)

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

C134S006000, C134S007000, C134S026000, C134S031000, C134S037000

Reexamination Certificate

active

06949145

ABSTRACT:
The present invention is directed towards the use of a reactive gas or vapor of a reactive liquid prior to or in combination with cryogenic cleaning to remove contaminants from the semiconductor surfaces or other substrate surfaces requiring precision cleaning. The reactive gas or vapor is selected according to the contaminants to be removed and the reactivity of the gas or vapor with the contaminants. Preferably, this reaction forms a gaseous byproduct which is removed from the substrate surface by the flow of nitrogen across the surface.

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