Wave transmission lines and networks – Automatically controlled systems
Reexamination Certificate
2008-11-14
2011-11-29
Pert, Evan (Department: 2826)
Wave transmission lines and networks
Automatically controlled systems
C333S017200, C333S262000, C333S263000, C455S217000, C342S198000
Reexamination Certificate
active
08067996
ABSTRACT:
A vanadium dioxide front-end advanced shutter device. The electronic shutter device is designed to protect receiver front-ends and other sensitive circuits from HPM pulse events such as HPM weapons, directed energy weapons, or EMPs. The shutter incorporates a transition material such as thin-film vanadium oxide (VOX) materials that exhibit a dramatic change in resistivity as their temperature is varied over a narrow range near a known critical temperature. A high-energy pulse causes ohmic heating in the shutter device, resulting in a state change in the VOX material when the critical temperature is exceeded. During the state change the VOX material transitions from an insulating state (high resistance) to a reflective state (low resistance). In the insulating state, the shutter device transmits the majority of the signal. In the reflective state, most of the signal is reflected and prevented from passing into electronics on the output side of the shutter device.
REFERENCES:
patent: 3852794 (1974-12-01), Pearson et al.
patent: 4575692 (1986-03-01), Goldie
patent: 4752778 (1988-06-01), Simpson
patent: 4810980 (1989-03-01), Heston et al.
patent: 5878334 (1999-03-01), Talisa et al.
patent: 7642881 (2010-01-01), Robinson et al.
P.J. Hood and J.F. De Natale, “Millimeter-wave dielectric properties of epitaxial vanadium dioxidethin films,”J. Appl. Phys., vol. 7, No. 1, pp. 376-381 (1991).
C.N. Berglund, “Thermal Filaments in Vanadium Dioxide,”IEEE Trans. on Elec. Dev., vol. ED-16, No. 5, pp. 432-437 (1969).
“Fast thin film vanadium dioxide microwave switches”, E. Sovero, D. Deakin, J.A. Higgins, J. DeNatale, S. Pittman, Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1990. Technical Digest Oct. 7-10, 1990, pp. 101-103.
.F. De Natale, P.J. Hood, and A.B. Harker, “Formation and characterization of grain-oriented VO2thin films,”J. Appl. Phys., vol. 66, No. 12, pp. 5844-5850 (1989).
Stotz S, Fritze S D, Downar H, Wegner J 1999 European Microwave Conference, 29th p. 415.
H.T. Kim, B.G. Chae, D.H. Youn, G. Kim, K.Y. Kang, S.J. Lee, K. Kim, and Y.S. Lim, “Raman study of electric-field-induced first-order metal-insulator transition in VO2-based devices,”Appl. Phys. Lett., vol. 86, pp. 242101 (2005).
V.S. Vikhnin, S. Lysenko, A. Rua, F. Fernandez, and H. Liu, “The model of ultrafast light-induced insulator-metal phase transition in vanadium oxide,”Sec. Intl. Conf. on Photo-induce Phase Trans., pp. 44-49 (2005).
D. Kucharczyk and T. Niklewski, “Accurate X-ray determination of the lattice parameters and the thermal expansion coefficients of VO2near the transition temperature,”J. Appl. Cryst. vol. 12, pp. 370 (1979).
Y. Ma, G. P. Li, “InGaP/GaAs HBT DC-20GHz Distributed Amplifier with Compact ESD Protection Circuits”, in Proc. EOS/ESD Symp., 2004.
Y. Ma, “Low Loading Capacitance On-chip Electrostatic Discharges Protection Circuits for Gallium Arsenide Heterojunction Bipolar Transistor RFIC”, Ph. D Dissertation, University of California, Irvine 2004.
Y. Ma, G. Li, “ESD Protection Design Consideration for InGaP/GaAs HBT RF Power Amplifiers”, IEEE Trans on Microwave Theory and Techniques,vol. 54, No. 1, pp. 221-228, Jan. 2005.
“Recent Progress and Planned Future Directions in Gallium Nitride at TriQuint”, Paul Saunier, Triquint Semiconductor, Panel Session Presentation, IMS2007 conference, Honolulu Hawaii, Jun. 2007.
C.N. Berglund and R.H. Walden, “A Thin-Film Inductance Using Thermal Filaments,”IEEE Trans. on Elec. Dev., vol. ED-17, No. 2, pp. 137-148 (1970).
J. Rozen, R. Lopez, R.F. Haglund, and L.C. Feldman, “Two-dimensional current percolation in nanocrystalline vanadium dioxide films,”Appl. Phys. Lett., vol. 88, pp. 081902 (2006).
K. Boutros, M. Regan, P. Rowell, D. Gotthold, R. Birkhahn, and B. Brar. International Electron Devices Meeting, 2003 Technical Digest. pp. 12.5.1-12.5.2.
K.S. Boutros, W.B. Luo, Y. Ma, G. Nagy, J. Hacker, IEEE J. Compound Semiconductor Integrated Circuit Symposium, Nov. 2006 pp. 93-95.
De Natale Jeffrey F.
Hacker Jonathan B.
Higgins J. Aiden
Hillman Christopher E.
Kobrin Paul H.
Koppel, Patrick, Heybl & Philpott
Pert Evan
Teledyne Scientific & Imaging, LLC
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