Valve and semiconductor fabricating equipment using the same

Details Valve and semiconductor fabricating equipment using the same Valve and semiconductor fabricating equipment using the same

1992-05-29

1994-02-08

Rivell, John

Excavating

Beneath a body of water

Suction

137597, 251 65, 25112906, 25112901, 251901, F16K 1124, F16K 3106

Patent

active

052841790

ABSTRACT:
Disclosed is a gas valve capable of switching gases to be introduced within a vacuum chamber with high speed thereby enhancing the controllability of the composion of a semiconducting thin film growing on a substrate and shortening the time required for growth of the thin film. The gas valve comprises a bendable film between a pair of parallel plate electrodes whereby operating the film by an electrostatic force and opening and closing a port for releasing gas to a substrate mounted on the wall surface of a gas chamber and a port for exhausting an unnecessary gas to an exhaust passage. The gas valve is mounted in the vicinity of the substrate within the vacuum chamber for supplying a working gas in a minimum amount required for the film growth.

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