Valance specific lanthanide doped optoelectronic metal fluoride

Details Valance specific lanthanide doped optoelectronic metal fluoride Valance specific lanthanide doped optoelectronic metal fluoride

1991-06-06

1993-09-28

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular dopant material

257103, 257607, 257 80, H01L 3300, H01L 2714, H01L 4902, H01L 29167

Patent

active

052488900

ABSTRACT:
An optoelectronic device, e.g. for integrated circuits, has an Si, II-VI or III/V semiconductor layer and an LaF.sub.3 or La.sub.1-x X.sub.x F.sub.3 insulating layer which is doped with Nd or Er to generate an optical signal whose wavelength is determined by the 4f ions used. The insulating layer can be grown epitaxially on the semiconductor layer and the lanthanide element ion substituting for a metal ion of the material forming the insulating layer has the same valence as the metal for which it is substituted.

REFERENCES:
patent: 4492743 (1985-01-01), Howe
patent: 4708494 (1987-11-01), Kleinerman
patent: 4967251 (1990-10-01), Tanaka et al.
Ennen et al. "1.54-.mu.m electroluminescence of Er doped Si grown by molecular beam epitaxy" Appl. Phys. Lett vol. 46 No. 4 Feb. 15, 1985 pp. 381-383.
Uwai et al. "Er doped InP and GaAs grown by metalorganic CVD" Appl. Phys. Lett vol. 51 No. 13, Sep. 28, 1987 pp. 1010-1012.

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