Coating apparatus – Gas or vapor deposition – Work support
Patent
1998-02-02
2000-02-08
Copenheaver, Blaine
Coating apparatus
Gas or vapor deposition
Work support
118500, 156345, 279128, 361234, B05C 1300
Patent
active
060224185
ABSTRACT:
In a vacuum processing apparatus for a semiconductor wafer, a first dielectric plate 4 is provided over an O-ring 32 on an upper surface of a main mounting stand unit 31, in which is embedded a coolant passageway 34, the upper surface thereof is configured as an electrostatic chuck, and a second dielectric plate 5 in which is embedded a heater 53 is provided thereon. Recesses and projections are machined into the surface of the first dielectric plate 4 so that crevices are formed between the resultant indentations 41 and the second dielectric plate 5. During the formation of an SiOF film, the heat from the heater 53 is not conducted through these crevices in a vacuum environment, so that the thermal conductivity between the second dielectric plate 5 and the first dielectric plate 4 is reduced and thus the temperature gradient therebetween is increased. Since the rear surface side of the first dielectric plate 4 is at no more than 200.degree. C., the O-ring is not subjected to a high temperature. This configuration suppresses deterioration of the O-ring, even during high-temperature processing, and also prevents breakdown of the insulating properties of an insulating film formed on a semiconductor wafer.
REFERENCES:
patent: 5236511 (1993-08-01), Etzkorn et al.
patent: 5735993 (1998-04-01), Yoshida
patent: 5922223 (1999-07-01), Okumura et al.
Copenheaver Blaine
Tokyo Electron Limited
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