Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2005-04-12
2005-04-12
Zarabian, Amir (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257S684000, C257S678000, C438S106000, C438S456000
Reexamination Certificate
active
06879035
ABSTRACT:
A method for manufacturing integrated circuit device lids includes creating a lid cavity on the surface of a lid wafer, forming a sealing surface on the lid wafer that surrounds the lid cavity, and forming a trench on the lid wafer between the lid cavity and the sealing surface. The resulting structure uptakes excess sealing surface material and prevents such material from entering the lid cavity.
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PCT Notification of Transmittal of the International Search Report and the Written Opinion of the International Searching Authority, or the Declaration mailed Sep. 15, 2004, regarding PCT/US 2004/012131 filed Apr. 19, 2004 (12 pages).
Gooch Roland W.
Schimert Thomas R.
Syllaios Athanasios J.
Duong Khanh
O'Keefe Egan & Peterman, LLP
Zarabian Amir
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