Vacuum micro-chamber for encapsulating a microelectronics device

Details Vacuum micro-chamber for encapsulating a microelectronics device Vacuum micro-chamber for encapsulating a microelectronics device

1992-12-21

1993-12-14

LaRoche, Eugene R.

Active solid-state devices (e.g., transistors, solid-state diode

Encapsulated

257678, 156633, H01L 21306, H01L 700

Patent

active

052705749

ABSTRACT:
A method of forming a vacuum micro-chamber for encapsulating a microelectronics device in a vacuum processing chamber comprises the steps of forming a microelectronics device (14) on a substrate base (30). The next step is to cover microelectronics device (14) with an organic spacer such as photoresist in a form having a plurality of protrusions, such as a star shape form (36). The next step is to cover the organic spacer and substrate base (30) with the metal layer (24) so that the metal layer covers all of the organic spacer except for a predetermined number of access apertures (34) to the organic spacer. Next, the organic spacer is removed through access apertures (34) to cause metal layer (24) to form a shell over a vacuum chamber (20) between the microelectronics device (14) and metal layer (24). The next step is to seal vacuum chamber (20) by coating metal layer (24) and closing off access apertures (34). The method of the present invention has application to produce vacuum micro-diodes and micro-triodes, micro-mass spectrometers, micro-light bulbs, and micro-thermocouple gages, as well as numerous other applications.

REFERENCES:
patent: 4213104 (1980-07-01), Cullen et al.
patent: 4701424 (1987-10-01), Mikkor
patent: 4766316 (1988-08-01), Jungkman
patent: 4973378 (1990-11-01), Lee et al.
patent: 4983878 (1991-01-01), Lee et al.
patent: 5063327 (1991-11-01), Brodie et al.
patent: 5083857 (1992-01-01), Hornbeck

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