Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Reexamination Certificate
1999-10-12
2001-05-22
Nguyen, Nam (Department: 1756)
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
C204S298350, C204S298230, C204S298270, C204S298280, C204S298290, C204S192120, C118S719000, C118S729000, C414S217000, C414S222020
Reexamination Certificate
active
06235171
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a vacuum film forming/processing apparatus and method for performing a film process such as forming various thin films onto a substrate or etching films, in vacuum atmosphere.
2. Description of the Related Art
In manufacturing processes of thin film applied devices such as a thin film magnetic head for a magnetic recording apparatus and various semiconductor devices, a film forming apparatus using a dry process such as a sputtering apparatus is often used. A film forming apparatus of such a kind is disclosed in, for example, Japanese Publication of Unexamined Patent Application No. 2-282474. The film forming apparatus disclosed in the publication is constructed as a sputtering film forming apparatus and comprises a conveying chamber having a conveying apparatus in addition to an introducing chamber, a wafer cleaning chamber, and a film forming chamber.
In the example of the film forming apparatus, one etching chamber as a wafer cleaning chamber and one film forming chamber are provided. Generally, a plurality of film forming chambers and a plurality of etching chambers are often provided in accordance with the kinds of thin films to be formed. The film forming chamber is used for performing a thin film forming process onto a substrate as an object on which thin films are formed. The etching chamber is generally used to clean a substrate (wafer) and perform an etching process to the formed thin film. The introducing chamber is used to introduce a substrate and a target from the atmosphere into the apparatus.
In the film forming apparatus, processes of forming and etching a thin film and the like (hereinafter, generically called a film forming process) are performed while sequentially conveying the substrate into a corresponding film forming chamber or etching chamber in accordance with each process. The conveyance of the substrate is carried out by the conveying apparatus in the conveying chamber. The introducing chamber is switched between an atmospheric pressure state and a vacuum state every introduction (replacement) of a new group of substrates and the conveying chamber is always maintained under a vacuum state.
As mentioned above, in a conventional film forming apparatus, a substrate is conveyed to the film forming chamber or the etching chamber always via the conveying chamber. There are consequently problems such that dusts and contamination, which occur in association with movement of the conveying apparatus in the conveying chamber, adhere to the substrate, so that an adverse influence is exerted on the film quality or the uniformity (stability) of the film quality deteriorates.
Although the conveying chamber is maintained under a vacuum state in the film forming apparatus, it is difficult to reduce the volume of the conveying chamber, since it has the conveying apparatus therein. Further, it is also difficult to reduce the volume of the film forming chamber, since it has all of members and mechanisms necessary for film formation, that is, both a part related to the substrate and a part related to the target. Therefore, in case of putting the conveying chamber back under the atmospheric pressure for maintenance or the like of the conveying chamber, or putting the film forming chamber back under the atmospheric pressure for replacement or the like of a target, it takes long time to open the chamber to the atmosphere and exhaust the air. In order to shorten the time, a vacuum pump having a high exhaust capability is necessary and the cost increases.
SUMMARY OF THE INVENTION
The invention has been achieved in consideration of the problems and it is an object of the invention to provide a vacuum film apparatus and method which exerts little influence of dusts on a substrate and moreover can reduce the exhaust volume.
A vacuum film forming/processing apparatus of the invention comprises: a first vacuum chamber for housing and holding a substrate as a target to which a film process is performed; a plurality of second vacuum chambers including at least one vacuum chamber for housing and holding a film formation material; and moving means capable of moving the first and second vacuum chambers relatively; wherein any one of the second vacuum chambers and the first vacuum chamber are selectively coupled to each other so as to communicate the spaces in the chambers with each other, and a film process is performed to the substrate in the first vacuum chamber.
A vacuum film forming/processing method of the invention comprises the steps of: housing and holding a substrate as a target to which a film process is performed in a first vacuum chamber; housing and holding a film formation material in at least one of vacuum chambers included in the plurality of second vacuum chambers; relatively moving the first and second vacuum chambers, thereby selectively coupling any one of the second vacuum chambers to the first vacuum chamber and communicating the spaces in the chambers with each other; and performing a film process to the substrate in the first vacuum chamber.
As used herein, the film process includes both of formation of a thin film and either removal of the formed thin film or process of the thin film into a predetermined shape. Vacuum as used herein denotes not only vacuum in the strict sense but also space or state under pressure lower than atmospheric pressure. In the following description, the definition is similarly applied.
In the vacuum film forming/processing apparatus or method of the invention, a relative moving operation is performed between a first vacuum chamber for housing and holding a substrate and a plurality of second vacuum chambers including at least one vacuum chamber for housing and holding a film formation material; any one of the second vacuum chambers and the first chamber are selectively coupled to each other and the spaces in the chambers are communicated with each other. In such a state, a film process to a substrate in the first vacuum chamber is performed.
According to the vacuum film forming/processing apparatus or method of the invention, it is possible to arrange the plurality of second vacuum chambers in a predetermined direction and move all of the second vacuum chambers together in a predetermined direction.
According to the vacuum film forming processing apparatus or method of the invention, the predetermined direction may be along a straight line extending in the horizontal direction, or along a circle extending in the horizontal direction. In the cases, the first vacuum chamber can be disposed on the horizontal plane including the arranged second vacuum chambers. Further, in this case, the first vacuum chamber can be moved in the horizontal direction toward the second vacuum chamber.
According to the vacuum film forming/processing apparatus or method of the invention, the first vacuum chamber may be disposed either above or below the second vacuum chamber. In this case, the first vacuum chamber can be moved in the vertical direction toward the second vacuum chamber.
According to the vacuum film forming/processing apparatus or method of the invention, the predetermined direction mentioned above may be along a straight line extending in the vertical direction. In this case, the first vacuum chamber can be disposed on the vertical plane including the arranged second vacuum chambers. Further, in this case, the first vacuum chamber can be moved in the horizontal direction toward the second vacuum chamber.
According to the vacuum film forming/processing apparatus or method of the invention, the vacuum chamber for the film formation material may be a sputtering chamber, for housing and holding a sputtering target as the film formation material.
According to the vacuum film forming/processing apparatus or method of the invention, the plurality of second vacuum chambers may include an etching chamber for housing and holding an electrode for etching.
According to the vacuum film forming processing apparatus or method of the invention, the etching electrode can be
Chacko-Davis Daborah
Nguyen Nam
Oliff & Berridg,e PLC
TDK Corporation
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