Coating apparatus – Gas or vapor deposition – Multizone chamber
Patent
1992-12-10
1995-04-11
Bueker, Richard
Coating apparatus
Gas or vapor deposition
Multizone chamber
118715, 118724, 423210, 423337, 422168, 422173, 422176, 422180, C23C 1600
Patent
active
054054451
ABSTRACT:
A vacuum extraction system is connected to a reactor vessel in which a chemical vapor deposition (CVD) process is carried out by using a suitable starting gas. The system comprises a pump for extracting a vacuum from the vessel, and a trapping device provided in the vessel and the pump for treating a starting gas pulled from the vessel into the system during the CVD process. The treatment of the starting gas pulled from the vessel is performed by using a gaseous oxidizing agent for separating a deposition component from the starting gas pulled from the vessel as an oxide, whereby a build-up of the component of the gas can be prevented in the pump. The trapping device comprises a tank body for receiving the starting gas pulled therein, and a perforated tube for introducing the gaseous oxidizing agent into the tank body to separate the deposition component of the received starting gas therefrom as an oxide.
REFERENCES:
patent: 2791490 (1957-05-01), Willcox
patent: 3069281 (1962-12-01), Wilson
patent: 3540853 (1970-11-01), Kulling
patent: 3586055 (1971-06-01), Wilson
patent: 4250428 (1981-02-01), Oliver
patent: 4327057 (1982-04-01), Bruning
patent: 4801437 (1989-01-01), Konagaya
patent: 5075090 (1991-12-01), Lewis
patent: 5123836 (1992-06-01), Yoneda
patent: 5183646 (1993-02-01), Anderson
Kumada Masatoshi
Nakagawa Koichi
Bueker Richard
Fujitsu Limited
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