Vacuum CVD apparatus

Details Vacuum CVD apparatus Vacuum CVD apparatus

1994-12-15

1996-05-21

Bueker, Richard

Coating apparatus

Gas or vapor deposition

134 221, C23C 1600

Patent

active

055179436

ABSTRACT:
A vacuum CVD apparatus including a reaction chamber into which a fluorine-containing compound gas and a carrier gas are introduced for cleaning. The fluorine-containing compound gas reacts with the matter deposited on the inner surface of the reaction chamber to gasify and remove the matter, preventing contamination of a semiconductor wafer later placed in the reaction chamber. Thus, it is possible to achieve high reliability of VSLIs produced in the reaction chamber.

REFERENCES:
patent: 5109562 (1992-05-01), Albrecht
patent: 5254176 (1993-10-01), Ibuka
patent: 5271264 (1993-12-01), Chanayem
patent: 5294262 (1994-03-01), Nishimura

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