Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2006-04-21
2010-11-09
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257SE45002
Reexamination Certificate
active
07829876
ABSTRACT:
A memory device with improved thermal isolation. The memory cell includes a first electrode element, having an upper surface; an insulator stack formed on the first electrode element, including first, second and third insulating members, all generally planar in form and having a central cavity formed therein and extending therethrough, wherein the second insulator member is recessed from the cavity; a phase change element, generally T-shaped in form, having a base portion extending into the cavity to make contact with the first electrode element and making contact with the first and third insulating members, and a crossbar portion extending over and in contact with the third insulating member, wherein the base portion of the phase change element, the recessed portions of the second insulating member and the surfaces of the first and third insulating members define a thermal isolation void; and a second electrode formed in contact with the phase change member.
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patent:
Hann James F.
Haynes Beffel & Wolfeld LLP
Macronix International Co. Ltd.
Weiss Howard
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