Vacuum airtight device having NbN electrode structure incorporat

Details Vacuum airtight device having NbN electrode structure incorporat Vacuum airtight device having NbN electrode structure incorporat

1996-02-08

1997-07-22

O'Shea, Sandra L.

Electric lamp and discharge devices

Discharge devices having a thermionic or emissive cathode

313309, 313336, 313346R, 313351, H01J 102, H01J 116, H01J 1910, H01J 114

Patent

active

056506899

ABSTRACT:
A field emission element including an electrode structure made of a thin film exhibiting increased adhesive strength. A thin film of niobium nitride (NbN) is formed on a glass substrate by sputtering or the like. The NbN film exhibits increased adhesive strength to a degree sufficient to prevent etching for formation of the film into electrodes from causing peeling of the film.

REFERENCES:
patent: 5189341 (1993-02-01), Itoh et al.
patent: 5256936 (1993-10-01), Itoh et al.
patent: 5319279 (1994-06-01), Watanabe et al.
patent: 5381069 (1995-01-01), Itoh et al.
patent: 5402041 (1995-03-01), Kishino et al.
patent: 5448133 (1995-09-01), Ise
patent: 5469014 (1995-11-01), Itoh et al.

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