V-MOS imaging array

Details V-MOS imaging array V-MOS imaging array

1978-05-26

1979-11-06

Edlow, Martin H.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 30, 357 24, 357 55, 307304, 307311, 357 31, H01L 2978, H01L 2714

Patent

active

041737652

ABSTRACT:
A solid state image sensing device comprises an array of picture sensing elements which are MOS transistors formed on a bulk of semiconductor material. The transistors are of a V-MOS configuration and have respective sources, V-shaped gates, and drains. The source-to-bulk diode of a V-MOS picture sensing element functions as a photodiode and is disposed near the surface of the array to receive a respective portion of imagewise illumination. In a preferred embodiment, the drain of the V-MOS picture sensing element is buried in the bulk directly beneath its respective source. The source, in conjunction with its gate, acts as a multiplex switch for the photodiode.

REFERENCES:
patent: 3911559 (1975-10-01), Bean
patent: 3924265 (1975-12-01), Rodgers
patent: 3973146 (1976-08-01), Arnold
patent: 3975221 (1976-08-01), Rodgers
patent: 4003036 (1977-01-01), Jenne
patent: 4003126 (1977-01-01), Holmes
patent: 4081841 (1978-03-01), Ochi
patent: 4084175 (1978-04-01), Ouyany
patent: 4084190 (1978-04-01), Stein
patent: 4105475 (1978-08-01), Jenne
Lee, Journ. of Appl. Physics, vol. 40, No. 11, Oct. 1969, pp. 4569 et seq.
Tseng et al., 3rd Int. Conf. on The Technology and Application of Charge Coupled Devices, pp. 75 et seq.

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