V-MOS Field effect transistor for a dynamic memory cell having i

Details V-MOS Field effect transistor for a dynamic memory cell having i V-MOS Field effect transistor for a dynamic memory cell having i

1979-01-26

1980-09-30

Wojciechowicz, Edward J.

357 23, 357 41, 357 45, H01L 2906

Patent

active

042258790

ABSTRACT:
This disclosure relates to a V-MOS field effect transistor which is provided with enhanced source capacitance to provide a single transistor dynamic memory cell. The formation of the source area is achieved by masking the silicon substrate, opening an aperture in the mask and then etching the silicon substrate in such a manner as to undercut the mask so that the mask provides a shield to subsequent ion implanting of the source area. Both P and N type dopants can be separately implanted with different energy levels so as to form an enhanced PN junction capacitance for the device. Such a field effect transistor can be achieved without the formation of a graded dopant concentration in the channel between the source and drain areas of the transistor.

REFERENCES:
patent: 4003036 (1977-01-01), Jenne
patent: 4119996 (1978-10-01), Jhabuala

Affiliated with

Also associated with

Rating

V-MOS Field effect transistor for a dynamic memory cell having i does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with V-MOS Field effect transistor for a dynamic memory cell having i, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and V-MOS Field effect transistor for a dynamic memory cell having i will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1172297