V-Mos field effect transistor

Details V-Mos field effect transistor V-Mos field effect transistor

1982-09-10

1985-03-05

Larkins, William D.

357 60, 357 54, 357 55, 357 2315, H01L 2978, H01L 2908

Patent

active

045034494

ABSTRACT:
A field effect transistor of the V-MOS type has a layer-shaped first region (3) of a first conductivity type, a subjacent second region (2, 1) of the second conductivity type and an island-shaped zone (4) of the second conductivity type. A V-shaped groove extends through the zone (4) and the first region (3) into the second region (2, 1) and is coated with an insulating layer (6) and a gate electrode layer (8). According to the invention, an insulating filler material (7) is present on the lower side of the groove (5) between the gate electrode (8) and the bottom of the groove (5) in order to increase the breakdown voltage.

REFERENCES:
patent: 4225879 (1980-09-01), Vinson
patent: 4271418 (1981-06-01), Hiltpold
patent: 4272302 (1981-06-01), Jhabvala
patent: 4295924 (1981-10-01), Garnache et al.
patent: 4316203 (1982-02-01), Tohgei
patent: 4329705 (1982-05-01), Baker
patent: 4398339 (1983-08-01), Blanchard et al.
patent: 4404735 (1983-09-01), Sakurai
patent: 4407058 (1983-10-01), Fatula et al.
patent: 4409609 (1983-10-01), Fukuda

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