V-groove semiconductor device with buried channel stop

Details V-groove semiconductor device with buried channel stop V-groove semiconductor device with buried channel stop

1979-01-05

1981-06-02

Wojciechowicz, Edward J.

357 23, 357 52, 357 58, H01L 2906

Patent

active

042714230

ABSTRACT:
An insulated gate field effect transistor has channel stop regions which are separated from the heavily doped drain region so that the sidewall or drain/source to channel stop capacitance is reduced. This is accomplished by a buried outdiffused channel region which also functions as the channel stop in a VMOS transistor.

REFERENCES:
patent: 4105475 (1978-08-01), Jenne
patent: 4116720 (1978-09-01), Vinson

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