UV-vis characteristic writing in silicon nitride and oxynitride

Details UV-vis characteristic writing in silicon nitride and oxynitride UV-vis characteristic writing in silicon nitride and oxynitride

1988-08-17

1990-06-12

Silverman, Stanley

Coating processes

Electrical product produced

Welding electrode

21912166, 4273977, B05D 306

Patent

active

049332066

ABSTRACT:
ArF excimer laser process is used to selectively dehydrogenate patterns on heavily hydrogenated silicon nitride and silicon oxynitride thin films. Excitation at 193 nm with a repetition rate of 100 Hz for 30 seconds duration, with a pulse energy on the order of 100 mJ/cm.sup.2, produces a selective dehydrogenation mechanism, opening a UV transparent window. A selective window opening allows a semiconductor device that is sensitive to UV radiation to be passively programmed, dependant on the locations of the windows opened.

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