Semiconductor device manufacturing: process – Repair or restoration
Reexamination Certificate
2006-10-30
2010-12-14
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Repair or restoration
Reexamination Certificate
active
07851232
ABSTRACT:
A method for the ultraviolet (UV) treatment of carbon-containing low-k dielectric enables process-induced damage repair. The method is particularly applicable in the context of damascene processing. A method provides for forming a semiconductor device by depositing a carbon-containing low-k dielectric layer on a substrate and forming a trench in the low-k dielectric layer, the trench having sidewalls ending at a bottom. The trench is then exposed to UV radiation and, optionally a gas phase source of —CH3groups, to repair damage to the carbon-containing low-k material of the trench sidewalls and bottom caused by the trench formation process (generally etching, ashing, and wet or dry cleaning). A similar treatment, with or without the gas phase source of —CH3groups, may be applied to repair damage caused in a subsequent planarization operation.
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pat
Crew William
Schravendijk Bart van
Novellus Systems Inc.
Richards N Drew
Weaver Austin Villeneuve & Sampson LLP
Withers Grant S
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