UV photocathode using negative electron affinity effect in Al.su

Details UV photocathode using negative electron affinity effect in Al.su UV photocathode using negative electron affinity effect in Al.su

1985-05-20

1986-10-07

Davie, James W.

357 4, 357 61, H01L 2714, H01L 3100

Patent

active

046162488

ABSTRACT:
A high efficiency UV responsive negative electron affinity photocathode with the long wavelength cutoff tunable over the wavelength from .about.200 to .about.300 nm based on Al.sub.x Ga.sub.1-x N. Negative electron affinity photocathodes for sharply enhanced photoemission yield can be formed by applying a layer of cesium to the surface of Al.sub.x Ga.sub.1-x N for which the Fermi energy level is appropriately positioned.

REFERENCES:
patent: 3575628 (1971-04-01), Wond
patent: 3971943 (1976-07-01), Jeunehomme et al.
patent: 4000503 (1976-12-01), Matare

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