UV-activated dielectric layer

Active solid-state devices (e.g. – transistors – solid-state diode – With shielding

Reexamination Certificate

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Details

C257SE21242, C257SE21259, C438S781000, C438S795000

Reexamination Certificate

active

07358597

ABSTRACT:
A dielectric layer on a semiconductor substrate is made porous by radiation with UV light. The dielectric material contains a photosensitive moiety that absorbs UV radiation and dissociates from the dielectric material. The UV-activated material then may be diffused to create pores in the dielectric layer, and to provide a dielectric layer having a low dielectric constant.

REFERENCES:
patent: 6689684 (2004-02-01), You et al.
patent: 2004/0039153 (2004-02-01), Elce et al.

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