Utilizing simultaneous masking and diffusion of peripheral subst

Details Utilizing simultaneous masking and diffusion of peripheral subst Utilizing simultaneous masking and diffusion of peripheral subst

1979-11-28

1981-05-05

Dean, R.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29571, 29577R, 148 15, 148175, 148187, 156653, 156657, 357 23, 357 41, 357 51, 357 59, 427 85, 427 86, H01L 2120, H01L 2122

Patent

active

042656850

ABSTRACT:
The present invention deals with a method of taking out a substrate electrode of a LOCOS-type silicon gate MOSIC device from the surface of the semiconductor substrate. According to the present invention, a masking layer for preventing the introduction of impurities is formed on the periphery of the semiconductor substrate simultaneously with the masking step for forming a resistor of polycrystalline silicon, the mask is removed after the impurities have been introduced, and a substrate electrode is formed on the exposed surface of the semiconductor substrate.

REFERENCES:
patent: 3911471 (1975-10-01), Kooi et al.
patent: 4013489 (1977-03-01), Oldham
patent: 4055444 (1977-10-01), Rao
patent: 4070748 (1978-01-01), Legat et al.
patent: 4080718 (1978-03-01), Richman
patent: 4081896 (1978-04-01), Dingwall
patent: 4110776 (1978-08-01), Rao et al.
patent: 4139786 (1979-02-01), Raymond et al.
patent: 4148055 (1979-04-01), Edlinger et al.
patent: 4187602 (1980-02-01), McElroy
Kooi, "Local Oxidation of Silicon" Philips Res. Repts, vol. 26, No. 3, pp. 157-165, Jun., 1971.

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