Utilizing polysilicon diffusion sources and special masking tech

Details Utilizing polysilicon diffusion sources and special masking tech Utilizing polysilicon diffusion sources and special masking tech

1978-06-06

1979-06-05

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

29577R, 29579, 29591, 148174, 148175, 148187, 148188, 156643, 156644, 156653, 156657, 156659, 357 20, 357 34, 357 54, 357 59, 357 91, 427 85, 427 86, 427 88, H01L 21225, H01L 21285

Patent

active

041572696

ABSTRACT:
A method consisting of a sequence of process steps for fabricating a bipolar transistor having base contacts formed of polysilicon material and an emitter contact formed of polysilicon material or metal. The emitter contact is self-aligned to the base contacts by the use of process steps wherein a single mask aperture is used for defining the base contacts and the emitter.

REFERENCES:
patent: 3460007 (1969-08-01), Scott
patent: 3719535 (1973-03-01), Zoroglu
patent: 3837935 (1974-09-01), Maeda et al.
patent: 3904450 (1975-09-01), Evans et al.
patent: 3915767 (1975-10-01), Welliver
patent: 4006046 (1977-02-01), Pravin
patent: 4013489 (1977-03-01), Oldham
patent: 4060427 (1977-11-01), Barile et al.
patent: 4074304 (1978-02-01), Shiba

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